Pattern fabrication by radiation-induced graft copolymerization

摘要

The present invention provides a method of pattern fabrication by radiation-induced graft copolymerization which enables not only the fabrication of a very fine resist pattern in a very small exposure dosage but also excellent etching fabrication by utilizing the current dry etching process through the pattern fabrication by making use of a resist capable of causing radiation-induced graft copolymerization and having excellent dry etching resistance, i.e., a poly(methacrylate) having a phenyl group, polystyrene, or its derivative.