PURPOSE:To effect the synchronous scanning with high precision by a method wherein the first free-shifting stage holding the first substrate and the second stage holding the second sensitive substrate are synchronously shifted. CONSTITUTION:A mask stage 22 holding a mask M (the first substrate), a wafer stage 23 holding a wafer W (the second substrate) as a sensing substrate as well as magnetic floating guides 24, 25 free-shiftingly guide and hold respective mask stage 22 and wafer stage 23 in the vertical direction are arranged in a vacuum vessel 21. The second stage 23 is synchronously shifted corresponding to the movement of the first stage 22 by a synchronous shifting bar 32 arranged on the upper part of the vacuum vessel 21. Furthermore, the first and second stages 22, 23 are non-contact held by the non-contact guiding mechnisms 24, 25 so as to be synchronously shifted on the vertical surface in the vacuum. Through these procedures, the pattern on a large spaced mask can be scaled down on a wafer with high precision.
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