ADHESION OF HIGH QUALITY SILICON DIOXIDE BY MEANS OF PLASMA REINFORCED CHEMICAL VAPOR ADHESION METHOD

摘要

PURPOSE: To deposit a high quality silicon dioxide on a substrate by introducing a reactive gas containing silicon and oxygen diluted into an inert carrier gas at a flow rate of 200sccm or above into a plasma enhanced CVD means along with an inactive carrier gas at a flow rate of 1000sccm or above and then applying an RF output at a density of about 1W/cm2 or above thereby generating plasma discharge. CONSTITUTION: A reactive gas containing silicon and a reaction gas containing oxygen diluted into an inert carrier gas is introduced into a reaction chamber 2 at a flow rate of 200sccm or above. N2 O and SiH4 are preferably employed as the reaction gas. An inert carrier gas is then introduced into the reaction chamber 2 at a flow rate of 1000sccm or above preferably at a flow rate of 2000sccm or above. Helium is a preferable carrier gas and argon, neon or xenon can also be employed. Subsequently, an RF output is applied at a density of about 1W/cm2 or above to generate a plasma discharge in a reaction chamber. Consequently, a high quality silicon dioxide 26 is deposited on a substrate 22 at a high rate.