HEAT TREATMENT OF SINGLE CRYSTAL OF III-V COMPOUND SEMICONDUCTOR AND WAFER OF III-V COMPOUND SEMICONDUCTOR

摘要

PURPOSE:To increase dislocation density, to form a dense cell structure and to obtain a single crystal having uniform characteristics by heat-treating a single crystal of a III-V compd. semiconductor grown by a pulling method with a sealing liq. in two stages within specified temp. ranges. CONSTITUTION:A single crystal of a III-V compd. semiconductor grown by the Czochralski method with a sealing liq., especially a Ga-As single crystal is held at 1,000-1,200 deg.C for a prescribed time, cooled to 600-950 deg.C at 10 deg.C/min cooling rate, held for a prescribed time and cooled to obtain a semiconductor single crystal having 2X105/cm3 dislocation density and =200mum uniform cell size of a cell structure of dislocation.