首页> 外国专利> ELECTRIC POWER APPARATUS FOR DRIVING INDUCTIVE LOAD AND PROTECTIVE APPARATUS AGAINST PARASITIC EFFECT DUE TO NEGATIVE IMPULSE OF POWER SUPPLY IN MONOLITHIC INTEGRATED CIRCUIT INCLUDING CONTROLLER FOR THE ELECTRIC POWER APPARATUS

ELECTRIC POWER APPARATUS FOR DRIVING INDUCTIVE LOAD AND PROTECTIVE APPARATUS AGAINST PARASITIC EFFECT DUE TO NEGATIVE IMPULSE OF POWER SUPPLY IN MONOLITHIC INTEGRATED CIRCUIT INCLUDING CONTROLLER FOR THE ELECTRIC POWER APPARATUS

机译:用于驱动单负集成电路中包括电源的控制器的电源的负脉冲引起的寄生效应的感应负荷和保护装置的电力设备

摘要

PURPOSE: To prevent break of a parasitic transistor by providing a shield element against negative impulses of a power source voltage in its voltage limiter. CONSTITUTION: If power apparatuses Q3 and Q4 are in a conducting state and an inductor L is assumed to be in a charged state, then any negative impulse on the voltage Vs executes the extinction of the arc on the power apparatuses Q3 and Q4 at the negative base voltage of the transistor Q3. At the same time, a voltage Vc at the common collector rises up to a clamp voltage set by a Zener diode Z2, and two breakdown stresses reverse to the power apparatuses Q3 and Q4 are produced, but these stresses are prevented by a voltage limiter constituted with transistors Q2 and Q5, a resistor Rc and a Zener diode Z1. Under this condition, the transistor Q2 is kept at a negative potential at its base by a voltage Vs, so that the arc is extinguished because the base is kept at a negative potential by the voltage Vs, and a positive over-voltage Vc on the load L ignites the transistor Q5, power apparatuses Q3 and Q4 in Darlington configuration are returned to a conducting state, and a positive over-voltage is discharged to the ground. By doing this, the parasitic effect caused by the negative impulse of the power source voltage can be eliminated.
机译:目的:通过在其电压限制器中提供一个屏蔽电源电压的负脉冲来防止寄生晶体管损坏的方法。组成:如果功率设备Q3和Q4处于导通状态,并且假定电感器L处于充电状态,则电压Vs上的任何负脉冲都会在功率设备Q3和Q4上将电弧消灭为负值晶体管Q3的基极电压。同时,在公共集电极上的电压Vc上升到由齐纳二极管Z2设定的钳位电压,并且产生了与功率设备Q3和Q4相反的两个击穿应力,但是这些应力通过构成的限压器来防止。通过晶体管Q2和Q5,电阻器Rc和齐纳二极管Z1。在这种情况下,晶体管Q2的基极被电压Vs保持在负电位,由于基极被电压Vs保持在负电位,并且晶体管Q2的正过电压Vc使基极保持在负电位,电弧被熄灭。负载L点燃晶体管Q5,达林顿配置的功率设备Q3和Q4返回导通状态,并且正过电压被放电到地。通过这样做,可以消除由电源电压的负脉冲引起的寄生效应。

著录项

  • 公开/公告号JPH0360039A

    专利类型

  • 公开/公告日1991-03-15

    原文格式PDF

  • 申请/专利权人 SGS THOMSON MICROELETTRONICA SPA;

    申请/专利号JP19900193202

  • 发明设计人 SARUBATOORE RACHITEI;SERUJIO PARAARA;

    申请日1990-07-23

  • 分类号H01L29/73;H01L21/331;H01L21/822;H01L27/02;H01L27/04;H01L27/06;H01L29/732;

  • 国家 JP

  • 入库时间 2022-08-22 06:03:13

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