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ELECTRON IMPACT, FIELD EMISSION TYPE ION SOURCE

机译:电子碰撞,场发射型离子源

摘要

PURPOSE:To stabilize ion current by providing a control electrode between an auxiliary electrode and an ion source, electrically connecting such control electrode and auxiliary electrode and disposing a self-bias resistance in the course of connection between such connecting point and ion source. CONSTITUTION:A control electrode 13 is disposed between a chip 2 and an auxiliary electrode 7, it is electrically connected with the auxiliary electrode 7 and a self-bias resistance 14 is inserted in the course of the connection between such connecting point and an acceleration electrode 8. When the chip 2 is irradiated with the electron beam 10 and the ion beam 11 is released, temperature of chip 2 changes due to the electron beam 10 generated from the filament, a emitted ion current i becomes i+ or -DELTAi because of a change as much as + or -DELTAi. This current flows through a bias resistance 14, controlling a voltage of control electrode 13 for the chip 2. Thereby, an ion current can be stabilized.
机译:目的:通过在辅助电极和离子源之间提供控制电极,电连接这种控制电极和辅助电极并在连接点和离子源之间的连接过程中设置自偏压电阻来稳定离子电流。组成:控制电极13设置在芯片2和辅助电极7之间,它与辅助电极7电连接,并且在这种连接点和加速电极之间的连接过程中插入了自偏置电阻14 8.当向芯片2照射电子束10并释放离子束11时,芯片2的温度由于从灯丝产生的电子束10而变化,由于a,发射的离子电流i变为i +或-DELTAi。最多更改+或-DELTAi。该电流流过偏置电阻14,该偏置电阻14控制芯片2的控制电极13的电压。由此,可以使离子电流稳定。

著录项

  • 公开/公告号JPH0369137B2

    专利类型

  • 公开/公告日1991-10-31

    原文格式PDF

  • 申请/专利权人 HITACHI LTD;

    申请/专利号JP19820187784

  • 发明设计人 ISHITANI TOORU;TAMURA HIFUMI;

    申请日1982-10-26

  • 分类号H01J37/08;H01J27/20;H01J27/26;

  • 国家 JP

  • 入库时间 2022-08-22 06:01:48

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