METHOD FOR GIVING A MERCURY MANIPULATOR TESTIMONIAL

摘要

The method is applied in the semiconductor equipment, and in particular in the control over the parameters of semiconductor materials and structures, with which precision is enhanced. The method: it determines the area of quicksilver contact through measurement of its resistance in contact with a metallic plate and the capacity of the quicksilver contact at the operative pressure of the quicksilver and in the implementation of a contact with the dielectric of the metal-dielectric structure with thickness of the dielectric from 0.08 to 0.12 mkm and a certain relative capacity. The aptitude of the manipulator for measurement is determined by comparing the values for area and capacity of the quicksilver with sample values derived from pure quicksilver in quicksilver contact of the manipulator.