首页> 外国专利> PROCESS FOR PREPARING A CHARGE COUPLED DEVICE WITH CHARGE TRANSFER DIRECTION BIASING IMPLANTS

PROCESS FOR PREPARING A CHARGE COUPLED DEVICE WITH CHARGE TRANSFER DIRECTION BIASING IMPLANTS

机译:用电荷转移方向偏置插接制备电荷耦合器件的过程

摘要

AN IMPROVED PROCESS FOR PREPARINGA CHARGE COUPLED DEVICE WITHCHARGE TRANSFER DIRECTION BIASING IMPLANTSAbstract of the DisclosureA process is disclosed of preparing a chargecoupled device containing charge transfer directionbiasing implants wherein the steps and materials forpatterning electrodes and implants promote accurateedge alignments of implants and electrodes whileminimizing strains and avoiding temperatures thatpermit unwanted lattic or intersticial ion migrationin the semiconductive substrate.
机译:改进的制备过程带有电荷耦合的设备电荷转移方向偏置插接披露摘要公开了一种准备费用的过程包含电荷转移方向的耦合器件偏置植入物,其中的步骤和材料图案化电极和植入物可提高精确度植入物和电极的边缘对齐,而减少应变并避免温度过高允许不必要的晶格或间隙离子迁移在半导体衬底中。

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