DFB LASER WITH ANTI-REFLECTION LAYER

摘要

ABSTRACT:DFB laser provided with an anti-reflection layer.A semiconductor laser of the distributed feed-back (DFB or DBR) type, the laser being bounded in thelongitudinal direction by end surfaces (5,6) at rightangles to the active region and at least one of theseend faces (5) being provided with an anti-reflectionlayer (8) in order to suppress Fabry-Pérot modes.According to the invention, in order to obtain anoptimum effect, an anti-reflection layer of hafnium oxideis used. The invention is used more particularly withgreat advantage in lasers of the DCPBH (Double ChannelPlanar Buried Hetero-structure) type.Fig. 1.