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EXCIMER LASER ABLATION METHOD AND APPARATUS FOR MICROCIRCUIT DEVICE FABRICATION

机译:用于微电路器件制造的准分子激光烧蚀方法和装置

摘要

A pulsed beam (14) from an excimer laser (10) is used for precision ablation of cadmium telluride (CdTe) and other material (16) to fabricate and delineate devices in electronic microcircuit structures. The fluence of the beam may be adjusted to selectively remove one constituent of the material (16), such as cadmium vs. tellurium, at a higher rate than the other constituent, while maintaining the integrity of the material surface. The beam may selectively remove an epitaxial layer of CdTe, CdZnTe, or HgCdTe from a GaAs substrate. The beam may be directed through a projection mask (32) and optical system (40) onto a material (34) to form an image for patterned ablation. The optical system (40) may focus an image of the mask on the material to form vertical sidewall patterns, or slightly defocus the image to form curved sidewall patterns and/or concave and convex lens structures for optical arrays.
机译:来自准分子激光器(10)的脉冲光束(14)用于碲化镉(CdTe)和其他材料(16)的精确烧蚀,以制造和描绘电子微电路结构中的器件。可以调整束的注量以以比另一组分更高的速率选择性地去除材料(16)的一种组分,例如镉对碲,同时保持材料表面的完整性。束可以从GaAs衬底选择性地去除CdTe,CdZnTe或HgCdTe的外延层。光束可以被引导通过投影掩模(32)和光学系统(40)到材料(34)上以形成用于图案化消融的图像。光学系统(40)可将掩模的图像聚焦在材料上以形成垂直侧壁图案,或将图像稍微散焦以形成用于光学阵列的弯曲的侧壁图案和/或凹透镜和凸透镜结构。

著录项

  • 公开/公告号WO9104573A2

    专利类型

  • 公开/公告日1991-04-04

    原文格式PDF

  • 申请/专利权人 HUGHES AIRCRAFT COMPANY;

    申请/专利号WO1990US04899

  • 发明设计人 BREWER PETER D.;ZINCK JENNIFER J.;

    申请日1990-08-29

  • 分类号H01L21/428;H01L21/461;

  • 国家 WO

  • 入库时间 2022-08-22 05:54:39

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