PROCESS FOR PLASMA DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE FILMS ONTO A SUBSTRATE

摘要

A deposition process chemical vapor plasma process for forming silicon nitride films and silicon dioxide on a substrate is characterized by the following steps: a) introducing di-tert-butylsilane and at least other reactant gas capable of reacting with di-tert-butylsilane to form either silicon nitride or silicon dioxide into a deposition reaction zone chemical vapor prrocédé containing said substrate on which is to be formed film silicon nitride or silicon dioxide film; b) maintaining the temperature of said zone and said substrate from about 100 ° C and 350 ° C; c) maintaining the pressure in said area between about 0.1 Torr and about 5 Torr; and d) passing said gas mixture into contact with said substrate while exciting said gas mixture with a plasma for a sufficiently long time to form a silicon nitride film or silicon dioxide on said substrate, said plasma being excited by RF energy between 10 and 500 Watts.