SELFALIGNED MERGED AND RESISTERED TRENCH CAPACITOR CELL AND MANUFACTURING METHOD THEREOF

摘要

SMART (Selfaligned Merged And Registered Trench) Capacitor for mega DRAM is manufactured by; forming a trench in P--type epitaxial layer (34) grown on the P+-type Si-substrate (35); forming a poly-Si (38) at inner side of trench; forming field oxide (39) on the top of trench; forming a P-wall (43) and source (42)-drain (44) on P-type epitaxial layer; forming a gate oxide (36); forming side walls (49) and gate electrode (30) on the gate oxide; forming a electrode (40) connecting to the source (42) through contact hole of oxide film (41). Specically the poly-Si is deposited by LPCVD method.