AMORPHOUS MELT FOR THIN-FILM RESISTORS AND METHOD FOR OBTAINING THE MELT

摘要

the invention u043eu0442u043du043eu0441u0438u0442u0441u00a0 to develop precision alloys with special electrical properties used u0434u043bu00a0 production of thin-film resistors. objective - enhancing the precision characteristics of the resistors by u043fu043eu043bu0443u0447u0435u043du0438u00a0 close to zero temperature coefficient u0441u043eu043fu0440u043eu0442u0438u0432u043bu0435u043du0438u00a0.the invention u043fu043eu0437u0432u043eu043bu00a0u0435u0442 to middle and low available in the following values: the surface u0441u043eu043fu0440u043eu0442u0438u0432u043bu0435u043du0438u00a0 while maintaining high stability and close to zero temperature to u044du0444u0444u0438u0446u0438u0435u043du0442u0430 u0441u043eu043fu0440u043eu0442u0438u0432u043bu0435u043du0438u00a0 u043du0430u043fu044bu043bu0435u043du043du044bu0445 films. u043du0430u043fu044bu043bu0435u043du043du044bu0435 film implemented on the basis of u0430u043bu044eu043cu0438u043du0438u00a0 and contain u043bu0435u0433u0438u0440u0443u044eu0449u0438u0435 elements in the following proportion, mas -, cobalt - 54,0 24.5% under 0.2 to 6.0} aluminium the rest.u0440u0435u0430u043bu0438u0437u0430u0446u0438u00a0 amorphous u0441u043eu0441u0442u043eu00a0u043du0438u00a0 u043eu0441u0443u0449u0435u0441u0442u0432u043bu00a0u0435u0442u0441u00a0 u0438u0437u043eu043bu0438u0440u043eu0432u0430u043du0438u0435u043c u0440u0430u0441u043fu044bu043bu00a0u0435u043cu044bu0445 of components from each other by the potential barrier u00a0u0447u0435u0439u043au0430u043cu0438, u043du0430u0445u043eu0434u00a0u0449u0438u043cu0438u0441u00a0 the anode and u043fu0440u0435u0432u044b - u0449u0430u044eu0449u0438u043cu0438 height u0440u0430u0441u043fu044bu043bu00a0u0435u043cu044bu0445 square within 5 to 10 mm. 2 boeing. s - lu, 1 table. (l