process for manufacture of integrated selbstausrichtenden same functional principles as dedicated circuits of gaas.

摘要

A method of making a field-effect transistor includes performing a first ion implant in at least one region of a gallium arsenide substrate and forming a metallization layer on the implanted substrate. A metallic masking layer is deposited on the metallization layer over the implanted region and that portion of the metallization layer which is unmasked is removed. A self-aligned source of implantation ions is beamed into the first implanted region in those areas not covered by the masking layer. The substrate is then annealed to activate the implanted region.