process for the production of silicon on iii v semi insulators and application of this semi insulators.

摘要

The present invention relates to a process for the preparation of mono-crystalline 3-5 semi-insulating materails by doping, characterized in that the starting charge of type rho is doped with at least one deep donor due to a transition element. It relates also to the use of the semi-insulating materials obtained in the fields of optoelectronics and of rapid electronics.