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Protective coating material for semiconductors - contains -polyimide from bis-benzene-di:acid-anhydride-per:fluoro:propane, PMDA-type di:anhydride, silicon-di:amine and ether-di:amine
Protective coating material for semiconductors - contains -polyimide from bis-benzene-di:acid-anhydride-per:fluoro:propane, PMDA-type di:anhydride, silicon-di:amine and ether-di:amine
Protective material (I) for semiconductor components contains polyimide resin, solvent and finely divided SiO2; the resin is obtd. by polymerisation of a tetracarboxylic acid dianhydride component (II) and a diamine component (III); (II) consists of 10-50 mol.% dianhydride of formula (IIA) and 90-50 mmol.% dianhydride (IIB) and (III) consists of 10-80 mol.% Si-contg. diamine of formula H2N-R1-SiR2R3-(Y-Si-R2R3!n-R1-NH2 (IIIA) and U-2U mol.% ether-diamine of formula H2N-Phe-O-Z-O-Phe-NH2 (IIIB); X = tetravalent gp. of formula Ar, Ar1-Ar1, Ar1-CO-Ar1, or Ar1-SiMe2-O-SiMe2-Ar1; R1 = 1-18C organylene; R2, R3 = opt. substd. 1-10C hydrocarbyl; Y = -O- or 1-10C hydrocarbylene; Z = 6-18C organylene gp. contg. an aromatic ring; Phe= phenylene; n = 1-100; if Y = O, (B) comprises 5-100 mol.% (IIIA) and 95-0 mol.% (IIIB). -
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机译：半导体元件的保护材料（I）包括聚酰亚胺树脂，溶剂和细分的SiO2。树脂过硬。通过四羧酸二酐组分（II）和二胺组分（III）的聚合; （II）由10-50摩尔％的式（IIA）的二酐和90-50mmol。％二酐（IIB）组成，并且（III）由10-80摩尔％的Si-contg组成。式H2N-R1-SiR2R3-（Y-Si-R2R3！n-R1-NH2（IIIA）的二胺和U-2U摩尔％的式H2N-Phe-OZO-Phe-NH2（IIIB）的醚-二胺; X =式Ar，Ar1-Ar1，Ar1-CO-Ar1或Ar1-SiMe2-O-SiMe2-Ar1的四价gp; R1 = 1-18C丙烯基; R2，R3 =最佳取代1-10C烃基; Y ＝ -O-或1-10C亚烃基; Z ＝ 6-18C亚甲基gp。，包含芳环; Phe ＝亚苯基; n ＝ 1-100;如果Y ＝ O，则（B）占5-100mol。％（ IIIA）和95-0摩尔％（IIIB）。
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