LED prodn. on transparent substrate - by single liq. phase epitaxy step, useful for integration on chip, etc.

摘要

In LED prodn. the novelty is that the semiconductor layers (2,3,4) of the LED structure and a transport semiconductor substrate layer(s) are deposited on a support substrate (1) by liquid phase epitaxy (LPE) in a single process step. Also claimed is a double heterostructure LCD in which an active layer (3) is sandwiched by two cladding layers (2,4) of greater bandgap than the active layer. The semiconductor layers (2-5) may be epitaxially grown by immersion process or the sliding crucible process. The transport substrate layer (5) may be deposited onto the support substrate (1) before or after deposition of the other layers (2-4). The layers (2-5) may comprise GaAlAsa or GaInAsP layers deposited on a GaAs support substrate (1) or GaInAsP layers deposited on a GaP support substrate. Pref. the layers (2-5) consist of a GaAlAs layers with different Ga and Al contents, the cladding layers (2,4) and the substrate layer (5) having a higher Al content than the active layer (3). ADVANTAGE - The process provides simple prodn. of an LED on a transparent substrate e.g. for integration on a chip or incorporation in a housing.