首页>
外国专利>
Method of forming microcrystalline silicon-containing silicon carbide film
Method of forming microcrystalline silicon-containing silicon carbide film
展开▼
机译:形成微晶含硅碳化硅膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A microcrystalline silicon-containing silicon carbide semiconductor film has an optical energy gap of not less than 2.0 eV, and a dark electric conductivity of less than 10.sup.-6 Scm.sup.-1. The Raman scattering light of the microcrystalline silicon-containing silicon carbide semiconductor film, which shows the presence of silicon crystal phase, has a peak in the vicinity of 530 cm.sup.-1. This microcrystalline silicon-containing silicon carbide semiconductor film is formed on a substrate by preparing a mixture gas having a hydrogen dilution rate . gamma., which is the ratio of the partial pressure of hydrogen gas to the sum of the partial pressure of a silicon-containing gas and the partial pressure of a carbon-containing gas, of 30, transmitting microwave of a frequency of not less than 100 MHz into the mixture gas near a substrate with an electric power density of not less than 4.410.sup.-2, and generating plasma at a temperature of the substrate of not less than 200. degree. C. and under a gas pressure of not less than 10.sup.-2 Torr.
展开▼