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Low power, TTL level CMOS input buffer with hysteresis

机译:具有迟滞的低功耗,TTL电平CMOS输入缓冲器

摘要

A circuit for use as a TTL level CMOS input buffer with hysteresis is disclosed. A first transistor of a first conductivity tupe has its source connected to a first reference voltage. Second and third transistors of opposite conductivity type have their source drain paths connected in series between the drain of the first transistor and a common potential. The gates of the first, second, and third transistors are connected to an input signal. An inverter has its input connected to the drain of the first transistor and has an output. A fourth transistor of the first conductivity type has its gate connected to the output, its drain connected to the series connection between the second and third transistors, and its source connected to a second reference voltage. By appropriately sizing the transistors, the low level trip point and the high level trip point of the circuit may be adjusted. The circuit draws low power during standby. Logic gates may also be designed that incorporate the circuit.
机译:公开了一种用作具有滞后的TTL电平CMOS输入缓冲器的电路。第一电导率管的第一晶体管的源极连接到第一参考电压。导电类型相反的第二和第三晶体管的源极漏极路径串联连接在第一晶体管的漏极和公共电位之间。第一,第二和第三晶体管的栅极连接到输入信号。反相器的输入连接到第一晶体管的漏极,并且具有输出。第一导电类型的第四晶体管的栅极连接到输出,其漏极连接到第二和第三晶体管之间的串联连接,并且其源极连接到第二参考电压。通过适当地确定晶体管的尺寸,可以调节电路的低电平跳变点和高电平跳变点。该电路在待机期间消耗低功率。逻辑门也可以设计成包含电路。

著录项

  • 公开/公告号US5034623A

    专利类型

  • 公开/公告日1991-07-23

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INCORPORATED;

    申请/专利号US19890458210

  • 发明设计人 HUGH P. MCADAMS;

    申请日1989-12-28

  • 分类号H03K19/094;

  • 国家 US

  • 入库时间 2022-08-22 05:46:09

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