ANTIREFLECTION FILM FOR SILICON SUBSTRATE OR GERMANIUM SUBSTRATE

摘要

PURPOSE:To improve an antireflection characteristic and durability by consisting the above film of multilayered films contg. silicon dioxide as a layer in contact with a substrate. CONSTITUTION:A 1st layer, 2nd layer ... N-th layer are formed from an air side and the N-th layer is formed in contact with the silicon substrate or germanium substrate. The 1st layer is formed of a fluoride, the 2nd layer of a zinc sulfide(ZnS) layer and the 3rd layer of a germanium(Ge) layer; thereafter, the ZnS layers and the Ge layers are alternately formed. The (N-1)st layer consists of the Ge layer and the N-th layer of the silicon dioxide (SiO2) film. Then, the materials (fluoride, Ge) having tensile stress and the materials having compressive stress (ZnS) are alternately laminated and, therefore, the mutual stresses are relieved and since these layers have the excellent adhesiveness to each other, the films hardly crack. The antireflection films to be formed on the silicon or germanium substrate are most preferably made into 4-layered constitution.