首页> 外国专利> METHOD OF MANUFACTURING SELF-SUPPORTING THIN PEROVSKITE LEAD SCANDIUM TANTALATE FILM

METHOD OF MANUFACTURING SELF-SUPPORTING THIN PEROVSKITE LEAD SCANDIUM TANTALATE FILM

机译:自支撑薄钙钙石铅钛矿薄膜的制备方法

摘要

PURPOSE: To easily obtain a free standing perovskite lead scandium tantalate film by depositing an oxidized magnesium layer on a base body, forming the film of lead scandium tantalate, etching the oxidized magnesium layer so as to remove it after that. ;CONSTITUTION: The film of lead scandium tantalate film is formed on the oxidized magnesium layer which is deposited on the sapphire or gadolinium- gallium-garnet(GGG) base material. Then, the oxidized magnesium layer is etched so as to release a lead scandium tantalate film. It is preferable that an MgO layer is formed by ≤1 μm thickness by sputtering from an MgO target. The etching of the MgO layer is executed by using phosphoric acid or hydrochloric acid.;COPYRIGHT: (C)1992,JPO
机译:用途:为了通过在基体上沉积氧化镁层,形成钽酸铅film膜,蚀刻氧化镁层以随后去除它,来轻松获得钙钛矿型钽酸铅lead钛膜。组成:钽酸铅scan薄膜是在氧化镁层上形成的膜,该氧化镁层沉积在蓝宝石或g镓镓石榴石(GGG)基体材料上。然后,蚀刻氧化的镁层,以释放钽酸铅scan膜。优选通过溅射从MgO靶形成厚度≤1μm的MgO层。 MgO层的蚀刻是通过使用磷酸或盐酸进行的。版权所有:(C)1992,日本特许厅

著录项

  • 公开/公告号JPH04295017A

    专利类型

  • 公开/公告日1992-10-20

    原文格式PDF

  • 申请/专利权人 G II C MARCONI LTD;

    申请/专利号JP19910332770

  • 发明设计人 ANIRU PATEIRU;ROJIYAA UIRIAMU UOTSUTOMOA;

    申请日1991-11-22

  • 分类号C01G35/00;C04B35/497;C23C14/08;C23C16/01;C23C16/40;H01B3/12;

  • 国家 JP

  • 入库时间 2022-08-22 05:44:06

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