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GATE DRIVING CIRCUIT FOR GTO

机译:GTO的门极驱动电路

摘要

PURPOSE:To easily ensure a DC breakdown voltage of a GTO even when a gate driving power supply is lost by short-circuiting a gate and a cathode of the GTO when a means detecting the voltage drop of the gate driving power supply is activated. CONSTITUTION:When interruption of a gate driving power supply 51a of a GTO gate driving circuit 10 takes place, an auxiliary relay 100 is deenergized at the time point when the voltage is less than a prescribed threshold voltage, the contact B of the auxiliary relay 100 short-circuits the gate and the cathode of a GTO 1, resulting that the resistance between the gate and the cathode of the GTO 1 goes to zero. Thus, the DC breakdown strength is improved and the DC breakdown voltage of the GTO 1 is ensured similarly to the case when a negative bias voltage is normal. Thus, even when the loss of the gate driving power supply takes place, the DC breakdown strength of the GTO is easily ensured.
机译:目的:即使在激活检测栅极驱动电源电压降的装置时将GTO的栅极和阴极短路,即使栅极驱动电源丢失,也可以轻松确保GTO的DC击穿电压。组成:当GTO栅极驱动电路10的栅极驱动电源51a发生中断时,辅助继电器100在电压小于预定阈值电压时断电,辅助继电器100的触点B短路GTO 1的栅极和阴极,导致GTO 1的栅极和阴极之间的电阻变为零。因此,类似于负偏置电压正常时的情况,提高了DC击穿强度并且确保了GTO 1的DC击穿电压。因此,即使当栅极驱动电源的损耗发生时,也容易确保GTO的DC击穿强度。

著录项

  • 公开/公告号JPH04150613A

    专利类型

  • 公开/公告日1992-05-25

    原文格式PDF

  • 申请/专利权人 TOSHIBA ENG CO LTD;TOSHIBA CORP;

    申请/专利号JP19900273409

  • 发明设计人 AKAO YOSHIZO;MUKOYAMA KIMIHARU;

    申请日1990-10-15

  • 分类号H03K17/73;

  • 国家 JP

  • 入库时间 2022-08-22 05:43:19

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