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Electric field induction quantum well guided wave path

机译:电场感应量子阱导波路径

摘要

The invention is directed to laterally confined optical waveguide devices in semiconductors using quantum-well structures. An optical waveguide (39) having a core (47) comprising at least one quantum-well structure (62, 64) is interposed between first and second cladding regions (43, 45) such that an optical beam (51) inserted into the core region (47) spreads laterally (53) with respect to a primary direction of the beam. Contacts (41) are fabricated on the surface of the top cladding region (45) and serve as means for applying an electric field to the core of the waveguide. The electric field induces a change in the refractive index of the portion of the quantum-well structure (62, 64) within the field. The change in the refractive index functions to laterally confine the propagation of the optical beam to the region of the core (47) within the electric field, while maintaining a low loss transmission. Controlling the lateral propagation of an optical beam by way of an applied electric field allows a family of low-loss optical devices such as modulators and switches to be realized. Such devices can be fabricated without regard to their orientation in the crystalline structure of the semiconductor material.
机译:本发明涉及使用量子阱结构的半导体中的侧向受限的光波导器件。在第一和第二包层区域(43、45)之间插入具有包括至少一个量子阱结构(62、64)的芯(47)的光波导(39),使得光束(51)插入到芯中区域(47)相对于光束的主方向横向(53)扩展。触点(41)被制造在顶部包层区域(45)的表面上,并且用作将电场施加到波导的芯的装置。电场在场内引起量子阱结构(62、64)的一部分的折射率的变化。折射率的变化起着将光束的传播横向限制在电场内到纤芯(47)区域的作用,同时保持低损耗传输。通过施加电场来控制光束的横向传播,可以实现一系列低损耗的光学设备,例如调制器和开关。可以制造这样的器件而不考虑它们在半导体材料的晶体结构中的取向。

著录项

  • 公开/公告号JPH04505674A

    专利类型

  • 公开/公告日1992-10-01

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19910507573

  • 发明设计人

    申请日1991-02-15

  • 分类号G02B6/12;G02F1/015;G02F1/017;G02F1/313;G02F1/35;

  • 国家 JP

  • 入库时间 2022-08-22 05:38:27

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