首页> 外国专利> foerfarande foer framstaellning of ginkgolid b fraan ginkgolid c

foerfarande foer framstaellning of ginkgolid b fraan ginkgolid c

机译:仍用于从银杏树皮c生产银杏树皮b

摘要

The invention relates to a process for the preparation of ginkgolide B from ginkgolide C and to ginkgolide B thus obtained, the process comprising the following succession of four steps: protecting the 10-hydroxy group of ginkgolide C by conversion to an alkyl ester, the reaction being effected in dimethylformamide at a temperature of from 15 DEG to 50 DEG C. for from 4 to 10 hours; activating the 7-hydroxy group of the resultant 10-protected ginkgolide C by conversion to a (R)thiocarbonyl ester, the activation being effected in basic conditions at a temperature of from 0 DEG to 40 DEG C. for from 1 to 24 hours; deoxygenating the 7-activated group in the resultant 10-protected 7-activated ginkgolide C by treating it with tributyltin hydride or tris-(trimethylsilyl)silane, in an aprotic solvent, in the presence of a free-radical generator, the reaction being effected at a temperature of from 70 DEG to 110 DEG C. for from 15 minutes to 3 hours under inert atmosphere, and cleaving the protecting group from the 10-hydroxy group of the resultant 10-protected ginkgolide B.
机译:本发明涉及由银杏内酯C制备银杏内酯B的方法以及由此获得的银杏内酯B,该方法包括以下连续的四个步骤:通过转化为烷基酯来保护银杏内酯C的10-羟基,反应在二甲基甲酰胺中于15℃至50℃的温度下进行4至10小时;通过转化成(R)硫代羰基酯活化所得的10-保护的银杏内酯C的7-羟基,该活化在0℃至40℃的碱性条件下进行1至24小时。在自由基产生剂的存在下,在质子惰性溶剂中,用氢化三丁基锡或三-(三甲基甲硅烷基)硅烷处理所得的10-保护的7-活化的银杏内酯C中的7-活化基团,使之脱氧。在惰性气氛下于70℃至110℃的温度下进行15分钟至3小时,并从所得的10-保护的银杏内酯B的10-羟基上裂解保护基。

著录项

  • 公开/公告号SE9201125L

    专利类型

  • 公开/公告日1992-10-10

    原文格式PDF

  • 申请/专利权人 SCRAS;

    申请/专利号SE19920001125

  • 发明设计人 TENG B-P;

    申请日1992-04-08

  • 分类号A61K31/34;A61K31/343;A61K36/00;A61P35/00;A61P43/00;C07D493/22;

  • 国家 SE

  • 入库时间 2022-08-22 05:33:54

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