AlGaAs/GaAs complementary IC structure

摘要

A low power complementary (Al,Ga)As/GaAs heterostructure insulated gate field-effect transistor (HIGFET) approach is described in which the n-channel transistor utilizes an InxGa1-xAs semiconductor gate (115) to reduce threshold voltage (Vt) of the n-channel FET to allow low power circuit operation (Fig. 9).