Improved post-oxidation anneal of silicon dioxide

摘要

The insulating and stability characteristics of silicon dioxide gate oxide insulator for field effect transistors are enhanced by subjecting the silicon dioxide to an annealing in an ambient that contains a gaseous oxygen-containing species in an amount sufficient to provide a partial pressure from the oxygen-containing material of about 1.33 x 10-9 bar to about 1.33 x 10-2 bar during annealing temperatures of about 500 DEG C to about 1200 DEG C. Such is carried out for a time sufficient to enhance the insulating and stability characteristics of the silicon dioxide insulator.