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Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

机译：低温退火电化学生长二氧化硅在（100）硅上的低表面复合速度

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Doi /led; Nicholas Grant; Keith Mcintosh; Nicholas Ewen Grant; Keith R. Mcintosh;
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1. Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature [J] . Grant N. E., McIntosh K. R. Electron Device Letters, IEEE . 2010,第9期

机译：低温退火电化学生长的二氧化硅在（100）硅上的低表面重组速度
2. Extremely low recombination velocity on crystalline silicon surfaces realized by low-temperature impurity doping in Cat-CVD technology [J] . Taro Hayakawa, Motoharu Miyamoto, Koichi Koyama, Thin Solid Films . 2011,第14期

机译：Cat-CVD技术中的低温杂质掺杂实现了晶体硅表面上极低的复合速度
3. Extremely low surface recombination velocities on low-resistivity n-type and p-type crystalline silicon using dynamically deposited remote plasma silicon nitride films [J] . Shubham Duttagupta, Fen Lin, Marshall Wilson Progress in photovoltaics . 2014,第6期

机译：使用动态沉积的远程等离子体氮化硅膜在低电阻率n型和p型晶体硅上的极低表面复合速度
4. Low surface recombination velocities achieved by silicon dioxide grown electrochemically in nitric acid [C] . Grant N.E. Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE . 2011

机译：通过在硝酸中电化学生长的二氧化硅实现的低表面重组速度
5. Investigation of Low Temperature, Atomic-Layer-Deposited Oxides on 4Hydrigen-Silicon Carbide and their Effect on the Silicon Carbide/Silicon Dioxide Interface. [D] . Haney, Sarah Kay. 2012

机译：研究4H-碳化硅-碳化硅上低温原子沉积的氧化物及其对碳化硅/二氧化硅界面的影响。
6. Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD [O] . Marta Chrostowski, José Alvarez, Alessia Le Donne, 2019

机译：PECVD对低温生长的掺硼氢化晶体硅的退火
7. Fundamental electrical properties of fluorinated and N2O plasma-annealed ultrathin silicon oxides grown by microwave plasma afterglow oxidation at low temperatures [O] . Chen P.C. 2012

机译：微波等离子体余辉氧化在低温下生长的氟化和N2O等离子体退火的超薄氧化硅的基本电性能

Low Surface Recombination Velocity on (100) Silicon by Electrochemically Grown Silicon Dioxide Annealed at Low Temperature

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