halbleiterphotodetektor and halbleiterphotodetektoranordnung with high spatial resolution

摘要

The high resolution semiconductor photodetector (40) comprises parallel layers (5, 3) of n-doped and p-doped semiconductor with electrical contacts (51) to collect photo-current. The layers are so oriented that the incidence of light rays (50) are essentially parallel to the layers, and the level of doping (both n and p) is selected so as to provide a sub-micron transition layer. Layers (3, 5) may be directly in contact or may have a third layer (9) between them with a large energy gap between the valence and conducting levels or bands. Pref. one or two dimensional arrays of such detectors may be arranged. USE/ADVANTAGE - High resolution scanning devices, relatively simple prodn.