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Determining diffusion length of minority charge carriers - generating blocking space charge zone at semiconductor crystal wafer by applying voltage
Determining diffusion length of minority charge carriers - generating blocking space charge zone at semiconductor crystal wafer by applying voltage
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机译:确定少数载流子的扩散长度-通过施加电压在半导体晶体晶片上产生阻挡空间电荷区
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摘要
An electrolyte permeated support is fitted to the back of the semiconductor crystal wafer. The latter is coupled to a voltage source via a contact between the water and an electrode in the electrolyte. Then the front side of the wafer is irradiated by light. A blocking space charge zone is generated on the rear side of the wafer by the applied voltage. By the illumination of the front side of the wafer a photo-current of the minority charge carriers is generated for measuring on the rear side. The diffusion length is determined by a specified equation, with photon flow detected by a calibrated photodiode. ADVANTAGE - Quantitative, local determination of diffusion length for wafer measuring.
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