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Determining diffusion length of minority charge carriers - generating blocking space charge zone at semiconductor crystal wafer by applying voltage

机译:确定少数载流子的扩散长度-通过施加电压在半导体晶体晶片上产生阻挡空间电荷区

摘要

An electrolyte permeated support is fitted to the back of the semiconductor crystal wafer. The latter is coupled to a voltage source via a contact between the water and an electrode in the electrolyte. Then the front side of the wafer is irradiated by light. A blocking space charge zone is generated on the rear side of the wafer by the applied voltage. By the illumination of the front side of the wafer a photo-current of the minority charge carriers is generated for measuring on the rear side. The diffusion length is determined by a specified equation, with photon flow detected by a calibrated photodiode. ADVANTAGE - Quantitative, local determination of diffusion length for wafer measuring.
机译:渗透了电解质的支撑物被装配到半导体晶体晶片的背面。后者经由水与电解质中的电极之间的接触而耦合至电压源。然后,晶片的正面被光照射。通过施加的电压在晶片的背面上产生阻挡空间电荷区。通过照射晶片的前侧,产生少数电荷载流子的光电流以用于在后侧测量。扩散长度由指定方程式确定,光子流由校准的光电二极管检测。优势-定量测定晶圆扩散长度。

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