Detecting lateral temp. distribution in semiconductor element - using laser-raster microscope with OBIC stage and laser with wavelength near absorption edge of semiconductor material

摘要

An OBIC image of the semiconductor element is taken at at least two different substrate temperatures under the same electrical working conditions. A difference image is produced to demonstrate different local heating. A laser in the near i.r. region serves as the source of radiation. The light reflected from the surface of the circuit to be examined is led to a photoreceiver (SEV) via a lens (obj) and beam splitter (T) to serve in forming the exposure image. The photo current generated by the laser in the semiconductor component is amplified in the OBIC stage and led to a processing computer for forming the image. USE - Testing highly integrated circuits esp. those based on silicon. Ascertaining internal temp. distribution.