首页> 外国专利> Suppression circuit for arc discharge effects in reactive high rate DC atomisation - with high frequency inductance between current supply and plasmatron

Suppression circuit for arc discharge effects in reactive high rate DC atomisation - with high frequency inductance between current supply and plasmatron

机译:无功高速率直流雾化中的电弧放电抑制电路-在电源和等离子加速器之间具有高频电感

摘要

Suppression circuit for arc discharge effects in reactive high rate DC atomisation, which is placed between the current supply and a plasmatron in the form of a high frequency inductance. The circuit pref. consists of at least one coil with soft magnetic ferrite core with an inductance in the mH range. USE/ADVANTAGE - Used in thin film deposition technology, e.g. the deposition of oxide layers in the mfr. of write-read heads, for suppression of arc discharge effects on high rate DC atomisation.
机译:用于无功高速率直流雾化的电弧放电抑制电路以高频电感的形式置于电流源和等离子加速器之间。电路偏好。由至少一个带软磁性铁氧体磁芯的线圈组成,其电感在mH范围内。使用/优势-用于薄膜沉积技术,例如氧化膜在mfr中的沉积。读写头的设计,用于抑制电弧放电对高速率直流雾化的影响。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号