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Segmented cascode HBT for microwave-frequency power amplifiers
Segmented cascode HBT for microwave-frequency power amplifiers
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机译:适用于微波功率放大器的分段共源共栅HBT
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摘要
A cascode transistor configuration includes an input terminal for receiving the input signal, an output terminal for outputting the output signal and bass and emitter terminals connectable to ground. Each of a predetermined plurality of common-base heterojunction bipolar transistors (HBTs) has a base coupled to the base terminal, and a collector coupled to the support output terminal. Each of the predetermined plurality of common-emitter HBTs is associated with one of the common-base HBTs. Each common-emitter HBT also has a base coupled to the input terminal, an emitter coupled to the emitter terminal, and a collector coupled to only the emitter of the associated common-base HBT.
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