首页>
外国专利>
Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
Low tuning rate PbTe/PbEuSeTe buried quantum well tunable diode lasers and arrays
展开▼
机译:低调谐速率的PbTe / PbEuSeTe掩埋量子阱可调二极管激光器和阵列
展开▼
页面导航
摘要
著录项
相似文献
摘要
A PbTe/PbEuSeTe buried quantum well diode laser and array and the method for making the same. The quantum well active region layer is buried between electrical and optical confinement regions which have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. The buried laser and array are produced using a two-step molecular beam epitaxy method.
展开▼