Method for manufacturing a read only memory device using a focused ion beam to alter superconductivity

摘要

A read only memory device comprises a first electrode, and a second electrode arranged overlapping with the first electrode so as to be geometrically in connection at the intersection. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed electrode out of said electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at the intersection corresponding to a prescribed stored data. PPIn the manufacturing method, the first and second electrodes are formed and, thereafter, a high resistance region is formed by irradiating focused ion beam.