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Logic gate circuit with limited transient bounce in potential of the internal voltage supply lines

机译:逻辑门电路,内部电源线的电位具有有限的瞬态反弹

摘要

A logic gate circuit of TTL, ECL or other configuration, having an output stage including at least one transistor and a control transistor which switches the output stage to either a low or high conductive state in accordance with an input logic control signal supplied to the control transistor. In order to limit the transient change in potential of the internal voltage supply lines of the logic circuit relative to the external voltage supply to which they are connected, which occurs during logic state transitions, the base-emitter path of the output transistor is shunted by the collector-emitter path of a current bypass transistor the base of which is driven by the control transistor. The output transistor may be a composite equivalent transistor formed by a Darlington-connected pair of transistors, and the bypass transistor may itself be such a composite transistor. With increasing collector current of the output transistor an increasing proportion of the base drive current supplied thereto by the control transistor is diverted by the current bypass transistor, thereby limiting the maximum collector current of the output transistor and consequently limiting the aforesaid transient change or "bounce" in potential of the internal supply lines relative to the external voltage supply.
机译:TTL,ECL或其他配置的逻辑门电路,其输出级包括至少一个晶体管和控制晶体管,该控制晶体管根据提供给控制器的输入逻辑控制信号将输出级切换为低或高导通状态晶体管。为了限制逻辑电路的内部电压供应线相对于其连接的外部电压的电势的瞬态变化(在逻辑状态转换期间发生),输出晶体管的基极-发射极路径被旁路。电流旁路晶体管的集电极-发射极路径,其基极由控制晶体管驱动。输出晶体管可以是由达林顿连接的一对晶体管形成的复合等效晶体管,并且旁路晶体管本身可以是这种复合晶体管。随着输出晶体管的集电极电流的增加,由控制晶体管提供给其的基极驱动电流的比例的增加被电流旁路晶体管转移,从而限制了输出晶体管的最大集电极电流,因此限制了上述瞬态变化或“反弹”。内部电源线相对于外部电源的电位。

著录项

  • 公开/公告号US5159213A

    专利类型

  • 公开/公告日1992-10-27

    原文格式PDF

  • 申请/专利权人 NORTH AMERICAN PHILIPS CORPORATION;

    申请/专利号US19900534773

  • 发明设计人 DERRELL Q. JOHNSON;

    申请日1990-06-07

  • 分类号H03K19/08;H03K17/16;

  • 国家 US

  • 入库时间 2022-08-22 05:22:07

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