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Broadband signal switching equipment constructed in accordance with field- effect transistor technology

机译:根据场效应晶体管技术构建的宽带信号交换设备

摘要

A crosspoint matrix is constructed in accordance with FET technology and includes matrix input lines which lead to matrix output lines at respective crosspoints, which matrix output lines each comprise, respectively, two signal conductors and having two signal inputs of a differential amplifier to which the two signal conductors of each matrix output line are respectively connectible via a pre-charging transistor to a respective terminal of the operating voltage source, the signal conductors of each matrix output line being respectively connectible to another terminal of the operating voltage source via a respective coupling element that is formed with the series circuit of an input transistor that has its control electrode connected to the sole signal conductor of the appertaining matrix input line and that is further formed by a switching transistor that has its control electrode charged with a through-connect signal or, respectively, an inhibit signal.
机译:交叉点矩阵是根据FET技术构造的,并且包括矩阵输入线,该矩阵输入线通向各个交叉点的矩阵输出线,每个矩阵输出线分别包含两个信号导体,并且具有差分放大器的两个信号输入,两个差分放大器连接到两个每个矩阵输出线的信号导体分别通过预充电晶体管可连接到工作电压源的相应端子,每个矩阵输出线的信号导体可通过各自的耦合元件分别连接到工作电压源的另一个端子它由输入晶体管的串联电路形成,该输入晶体管的控制电极连接到相应矩阵输入线的唯一信号导体,并且进一步由开关晶体管形成,该开关晶体管的控制电极被充有直通信号,或者分别是一个禁止信号。

著录项

  • 公开/公告号US5159330A

    专利类型

  • 公开/公告日1992-10-27

    原文格式PDF

  • 申请/专利权人 SIEMENS AKTIENGESELLSCHAFT;

    申请/专利号US19900580485

  • 发明设计人 GERHARD TRUMPP;JAN WOLKENHAUER;

    申请日1990-09-11

  • 分类号H04B1/00;

  • 国家 US

  • 入库时间 2022-08-22 05:22:07

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