首页> 外国专利> MANUFACTURE OF VACUUM CHAMBER IN CVD APPARATUS AND DRY ETCHING APPARATUS

MANUFACTURE OF VACUUM CHAMBER IN CVD APPARATUS AND DRY ETCHING APPARATUS

机译:CVD设备和干式蚀刻设备中真空腔的制造

摘要

PURPOSE:To reduce the weight of an apparatus and to improve the heat conductivity by forming anodic oxide films on a box-shaped Al body and an Al lid for a vacuum chamber and evaporating and removing water by heat treatment. CONSTITUTION:Anodic oxide films are formed on at least the insides of a box-shaped Al body and an Al lid for a vacuum chamber with an oxalic acid soln. or the like. The thickness of the films is about 0.5-20mum. Heat treatment is then carried out at about 100-150 deg.C for about 5-20hr to evaporate and remove water adsorbed on the anodic oxide films. By this method, a vacuum chamber having satisfactory heat conductivity can simply be manufactured at a low cost. The resistance of the vacuum chamber to corrosion by gases used in CVD and dry etching are comparable to or higher than that of a stainless steel vacuum chamber.
机译:目的:通过在箱形铝体和用于真空室的铝盖上形成阳极氧化膜,并通过热处理蒸发和除水,以减轻设备的重量并提高导热性。组成:阳极氧化物膜至少形成在盒状铝体和带有草酸溶液的真空室用铝盖上。或类似的东西。膜的厚度约为0.5-20μm。然后在约100-150℃下进行热处理约5-20小时,以蒸发并除去吸附在阳极氧化膜上的水。通过这种方法,可以以低成本简单地制造具有令人满意的导热率的真空室。真空腔室对CVD和干法蚀刻所用气体的腐蚀能力与不锈钢真空腔室相当或更高。

著录项

  • 公开/公告号JPH0553870B2

    专利类型

  • 公开/公告日1993-08-11

    原文格式PDF

  • 申请/专利权人 SHOWA ALUMINIUM CO LTD;

    申请/专利号JP19850243660

  • 发明设计人 ISOYAMA EIZO;KATO YUTAKA;

    申请日1985-10-29

  • 分类号C23C16/44;C23F4/00;C25D11/18;C30B25/08;

  • 国家 JP

  • 入库时间 2022-08-22 05:21:43

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