MANUFACTURE OF AMORPHOUS SILICON FILM, AND MANUFACTURE OF AMORPHOUS SILICON NITRIDE FILM, AND MANUFACTURE OF CRYSTALLITE SILICON FILM, AND NONSINGLE CRYSTAL SEMICONDUCTOR DEVICE

摘要

PURPOSE: To improve the interface property which affects device property by making this corresponding to the enlargement of area of a nonsingle crystal film such as an a-Si film, etc., and besides, improving the property of a film thereby enabling a high-speed film. ;CONSTITUTION: In the manufacture of an amorphous silicon film by the plasma CVD method using high-frequency discharge, the film growth pressure P (Torr) is set to not less than 0.25Torr and not more than 2.5Torr, and the frequency f (MHZ) of a high frequency power source is set to not less than 30MHz and not more than 120MHz, and making power Pw (W/cm²) is made not more than the value prescribed by 10/f (MHz), the distance d between electrodes (cm) is made more than the value prescribed by f/30.;COPYRIGHT: (C)1993,JPO&Japio