METHOD FOR GROWING HETEROEPITAXIAL LAYER ON COMPOUND SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE:To make it possible to prevent warp of semiconductor wafer by introducing instantly and rapidly cooling process in growing process when an epitaxial layer of a compound semiconductor different from that of a compound semiconductor substrate is grown on the substrate. CONSTITUTION:When an epitaxial layer of compound semiconductor such as GaAsP different from that of a compound semiconductor substrate is grown on the substrate such as GaP substrate, a high-frequency coil for heating of epitaxial growing device is turned off once or several times for about 1 minute to instantly cool the epitaxial layer and GaP layer and mixed crystal ratio- changing layer and mixed crystal ratio-fixing layer of GaAsP are successively grown.