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GTO THYRISTOR TYPE 2 HAVING HIGH OFF-GATE GAIN

机译:GTO晶闸管2型具有高门外增益

摘要

PURPOSE: To obtain a switch element capable of turning off a large current too by a micro signal by connecting the base of an initial stage transistor to the collector of a control transistor, and connecting similarly its collector to the base of the control transistor. ;CONSTITUTION: A final stage transistor 1 to burden a main current, the initial stage transistor 2 to burden an intermediate current, and the control transistor 8 to burden a small current are provided, and the base current of the final stage transistor 1 flows in the initial stage transistor 2, and the base current of the initial stage transistor flows in the control transistor 8. Since the base current of the control transistor 8 is smaller in several figures compared with the main current, considerable base resistance 4 can be put in the control transistor 8. This resistance prevents an off-gate current from being spent by a main current circuit just before turning-off, and gives high off-gate gain. Besides, this separation is attained in space or high resistance. Thus, the off-gate current is weakened so as to be as weak as an on-gate current, and the direct current of large capacity can be turned off by a micro contact even without using driving power supply.;COPYRIGHT: (C)1993,JPO&Japio
机译:用途:通过将初始晶体管的基极连接到控制晶体管的集电极,并类似地将其集电极连接到控制晶体管的基极,来获得一种能够通过微信号也关闭大电流的开关元件。 ;组成:提供用于负担主电流的末级晶体管1,用于负担中间电流的末级晶体管2和用于控制小电流的控制晶体管8,末级晶体管1的基极电流流入。初始晶体管2,并且该初始晶体管的基极电流流入控制晶体管8。由于与主电流相比,控制晶体管8的基极电流在几幅图中较小,因此可以放置相当大的基极电阻4。控制晶体管8。该电阻防止了在截止之前主电流电路消耗掉栅极电流,并提供了很高的截止栅极增益。此外,在空间上或高电阻下实现了这种分离。因此,关闭栅极电流被削弱,使其与打开栅极电流一样弱,并且即使不使用驱动电源,也可以通过微接触来关闭大容量的直流电。版权所有:(C) 1993,日本特许厅

著录项

  • 公开/公告号JPH05206814A

    专利类型

  • 公开/公告日1993-08-13

    原文格式PDF

  • 申请/专利权人 KUKIHARA TAKEAKI;

    申请/专利号JP19920051078

  • 发明设计人 KUKIHARA TAKEAKI;

    申请日1992-01-27

  • 分类号H03K17/60;H01L29/74;H03K17/73;

  • 国家 JP

  • 入库时间 2022-08-22 05:19:41

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