首页> 外国专利> GTO thyristor with high off-gate gain (HIGH OFF-GATE GAIN GTO THYRISTOR)

GTO thyristor with high off-gate gain (HIGH OFF-GATE GAIN GTO THYRISTOR)

机译:具有高关断增益的GTO晶闸管(高OFF-GATE GAIN GTO晶闸管)

摘要

As a GTO thyristor with a high off-gate gain, the thyristor is separated into a main transistor and a sub-transistor, while the latter maintains a diode and a base resistor as main current paths.;In another embodiment, one base resistor is included in the three transistor configuration.;The off-gate gain reaches 10,000 times that of the conventional type, and the operation is clear and easy to manufacture. A bipolar switch element capable of turning off a large direct current by a minute signal is obtained.
机译:作为具有高关断增益的GTO晶闸管,晶闸管被分为一个主晶体管和一个子晶体管,而子晶体管则将二极管和基极电阻保持为主电流路径。在另一个实施例中,一个基极电阻是包括在三个晶体管配置中。栅极增益达到传统类型的10,000倍,并且操作清晰且易于制造。获得了一种能够通过微小信号关断大直流电流的双极型开关元件。

著录项

  • 公开/公告号KR960704391A

    专利类型

  • 公开/公告日1996-08-31

    原文格式PDF

  • 申请/专利权人 쿠키하라 켄메이;

    申请/专利号KR19960700465

  • 发明设计人 쿠키하라 켄메이;

    申请日1996-01-29

  • 分类号H03K17/22;H03K17/60;

  • 国家 KR

  • 入库时间 2022-08-22 03:44:24

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