FORMATION OF SIN FILM

摘要

PURPOSE: To obtain a thin film with the progress of oxidation retarded in the formed film by supplying a process gas capable of being excited by a laser beam and used as an N source in the final film forming stage, irradiating the atmospheric gas contg. excess N with a laser beam and forming the film. ;CONSTITUTION: The vicinity of a substrate 4 is heated and held by a heater 7a provided to a substrate holder 7. The Si₂H₆ and NH₃ as the gaseous materials (g) are supplied from a gaseous material feed line 2. The gaseous materials (g) are diffused and supplied on the upper region of the substrate 4, the gaseous materials (g) are decomposed and excited by the heating of the heater 7a and the supply of the energy of a laser beam 9, and an SiN film is grown on the substrate 4. The synthesized film is then enriched with nitrogen. In this case, a process gas gt capable of being excited by a laser beam and used as the N source is supplied to a thin film forming chamber 1a to produce an atmospheric gas contg. an excess N source close to the substrate 4, and the N content on the film surface is increased utilizing the N source. Consequently, the film has a stable SiN structure, and the oxidation resistance is improved.;COPYRIGHT: (C)1993,JPO&Japio