REAKTIV GASS FOR PLASMA-ASSISTERT ETSING OG FREMGANGSMAATEFOR STABIL ETSING AV SUBSTRATER OVER KANTER

摘要

A small percentage of an electronegative gas is included in a gas mixture which is fed into a plasma region of a plasma assisted chemical etching apparatus so as to suppress arc-like discharges at surface discontinuities of a substrate which is receiving etching treatment to shape the surface thereof.