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Method for manufacturing tunnel junction type josephson device composed of compound oxide superconductor material
Method for manufacturing tunnel junction type josephson device composed of compound oxide superconductor material
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机译:复合氧化物超导材料构成的隧道结型约瑟夫逊器件的制造方法
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摘要
For manufacturing a superconducting device having a tunnel junction formed of an extremely thin insulator layer sandwiched between a pair of oxide superconductor thin films, a first superconducting layer of oxide superconductor thin film is formed on a substrate, and a MgO thin film is deposited on the first superconducting layer at a substrate temperature of not higher than 200°C. The MgO thin film is heat-treated so that crystallinity of the deposited MgO thin film is improved, and thereafter, a second superconducting layer of oxide superconductor thin film is formed on the MgO thin film.
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