CCD image sensor with frame transfer method

摘要

The junction gate of the first conductivity type was formed on the wafer surface instead of the conventional polysilicon gate formed on the upper side of the photodetecting region.;A second conductivity type barrier layer is formed between the junction gate and the channel region, and a second conductivity type low concentration substrate is formed under the channel region, A high-concentration substrate was sequentially formed. Accordingly, since the structure of the CCD image sensor of the frame transfer type is improved, not only the signal response and the photoelectric conversion efficiency are increased, but also the OFD control and the shutter characteristic can be easily obtained by the clock signal.