A step of forming a defect protective film on a semiconductor substrate and then separating the device; Subsequently immersing the etch stop layer on the entire surface of the substrate, and then removing the layers on the device region to expose a predetermined semiconductor substrate; And a step of forming an upper structure on the predetermined device region and the isolation region using a conventional continuous semiconductor process. According to the present invention, in the process of manufacturing the upper structure of the semiconductor device, It is possible to prevent a severe step and a leakage current source from being formed in the lower layer by providing the etch stop layer on the layer and to prevent defects in the substrate silicon in the periphery of the device region by interposing a defect protective film between the peripheral portion of the device region and the etch stop layer It is possible to greatly improve the characteristics and reliability of the semiconductor device.
展开▼
