METHOD OF PRODUCING AMORPHOUS METALLIC FILMS

摘要

use: u0442u0435u0445u043du043eu043bu043eu0433u0438u00a0 u0438u0437u0433u043eu0442u043eu0432u043bu0435u043du0438u00a0 plastic elements in electronic and optical devices on the solid body. the essence of the u0438u0437u043eu0431u0440u0435u0442u0435u043du0438u00a0: a well metal films u0434u043eu0441u0442u0438u0433u0430u0435u0442u0441u00a0 by u043fu043eu0434u0430u0432u043bu0435u043du0438u00a0 surface migration of hell - volumes in the u0440u0430u0441u043fu044bu043bu0435u043du0438u00a0 targets. oem u0430u0434u0441u043eu0440u0431u0438u0440u043eu0432u0430u043du043du043eu0433u043e strip, entering into the reaction with the material of the film.the target u0438u0441u043fu0430u0440u00a0u0435u0442u0441u00a0 impulse laser u0438u0437u043bu0443u0447u0435u043du0438u00a0 in an inert gas environment. u0434u0435u0441u043eu0440u0431u0446u0438u00a0 strip before each new deposition of metal u043eu0441u0443u0449u0435u0441u0442u0432u043bu00a0u0435u0442u0441u00a0 by bombing the u0432u044bu0441u043eu043au043eu044du043du0435u0440u0433u0435u0442u0438 - u0447u043du044bu043cu0438 electrons and ions u043bu0430u0437u0435u0440u043d oh plasma.a way to preclude the need for forced u043eu0445u043bu0430u0436u0434u0435u043du0438u00a0 substrate to the temperature below the phase transition temperature u0430u043cu043eu0440u0444u043du0430u00a0 crystal, as well as u043fu043eu0437u0432u043eu043bu00a0u0435u0442 u0440u0430u0441u0448u0438u0440 does the class of substances of which the porous film can be obtained. 1 u0442u0430u0431u043b., 2).