Electron beam negative resist developed by aq. alkali - contg. 4-halophenol novolak and poly:cyclic partly hydrogenated triazine deriv. as crosslinker

摘要

The negative resist developed by aq. alkali consists of a 2-component system, consisting of a 4-halophenol novolak (I) of Mn = 500-800, prepd. by condensation of 4-halophenol with HCHO in the presence of an acid, and 1-10%, w.r.t. (I) of a crosslinker (II) (based on a polycyclic, partly hydrogenated 1,3,5-triazine deriv. dissolved in a resist solvent (III). (I) is a 4-chloro or 4-bromo-phenol novolak. (II) is used an amt. of 4-6% w.r.t. (I) and pref. is hexamethylene tetramine (IIA) or hexamethoxymethylmelamine. (III) is a mixt. of ethylene glycol acetate (IIIA), butyl acetate, (IIIB) and xylene. USE/ADVANTAGE - The resist is useful e.g. as etching mask in the prodn. of highly integrated circuits in microelectronics. It has higher resolution than usual and very high sensitiv