首页> 外国专利> Grain boundary Josephson element - formed on textured silicon@ substrate having thin auxiliary layer with intermediate layer formed on edge

Grain boundary Josephson element - formed on textured silicon@ substrate having thin auxiliary layer with intermediate layer formed on edge

机译:晶界约瑟夫森元件-形成在具有薄辅助层且在边缘上形成中间层的网状硅@衬底上

摘要

Grain boundary Josephson element (I) is formed on a textured substrate, whose surface has a thin auxillary layer. An intermediate layer is formed on the edge of the auxillary layer and producing a transition zone. The crystal axes are directed differently to the transition zone. A conducting piece extends over the transition zone and forms a boundary region, the conducting piece being made of a metal oxide high temp. superconductor, in which the crystal axes run in the plane of the conductor piece on both sides of the boundary region to form a grain boundary in this region. A substrate (3) made of Si and having (100) orientation is used. The auxillary layer (4) and the intermediate layer (6) are made of cubic Y2O3 or Y-stabilised ZrO2 or vice versa. On the part of the Y2O3 layer lying on the substrate the crystal axes are rotated in the layer plane opposite the corresponding axes of the substrate, whilst the direction of the crystal axes of the Y-stabilised ZrO2 layer is the same as the direction of the corresponding crystal axes of each base. ADVANTAGE - A high current density is produced.
机译:晶界约瑟夫森元件(I)形成在带纹理的基底上,该基底的表面具有薄的辅助层。在辅助层的边缘上形成中间层并产生过渡区。晶轴指向过渡区的方向不同。导电件在过渡区域上延伸并形成边界区域,该导电件由高温金属氧化物制成。超导体,其中晶轴在边界区域两侧的导体片平面内延伸,从而在该区域形成晶界。使用由Si制成并具有(100)取向的衬底(3)。辅助层(4)和中间层(6)由立方晶的Y 2 O 3或Y稳定的ZrO 2制成,反之亦然。在位于衬底上的Y2O3层的一部分上,晶轴在与衬底相应轴相反的层平面中旋转,而Y稳定的ZrO2层的晶轴方向与衬底上的方向相同。每个碱基的相应晶轴。优点-产生高电流密度。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号