CCD sensor matrix for ionising radiation - has conductive connection of flat doping zone, controlling first stage potential, formed by potential separating regions

摘要

In the sensor, no deep-reaching channel stopper regions exist in the sensitive region, and large surface portions of a matrix cell do not have conductive gate layers. The remaining cell surface is controlled by a very thin metal gate film. Thus the cover layer extension is minimised and the generation active region depth is limited. The drain channels for parasitically generated charges and the overflow regions for excessive charge carriers are integrated. Due to very thin cover films, the ionising particles can be detected using negligible energy. Degradation effects are reduced by trimming the depth of the generation active region. USE/ADVANTAGE - E.g. for videos applications and optical radiation measuring appts., without degradation tendency, crystal interference, and with relatively small chip surface.